Morphology and Chemical Composition of InxGa1-xAs NWs Au-assisted Grown at Low Growth Temperature Using MOCVD

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	Journal of Applied Sciences
	Year: 2011 \| Volume: 11 \| Issue: 8 \| Page No.: 1315-1320 DOI: 10.3923/jas.2011.1315.1320

Morphology and Chemical Composition of In_xGa_1-xAs NWs Au-assisted Grown at Low Growth Temperature Using MOCVD

E. Wibowo, Z. Othaman, S. Sakrani, A.S. Ameruddin, D. Aryanto, R. Muhammad and I. Sumpono

Abstract: Cylindrical In_xGa_1-xAs NWs have been successfully grown at low growth temperature using MOCVD. Field Emission-Scanning Electron Microscopy (FE-SEM) characterization and Energy Dispersive X-ray (EDX) analysis have been used to investigate the morphology and chemical composition of NWs, respectively. Both characterization results consistently reinforce that the NWs growth were via direct impinging mechanism and NW have relatively uniform chemical composition.

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How to cite this article:

E. Wibowo, Z. Othaman, S. Sakrani, A.S. Ameruddin, D. Aryanto, R. Muhammad and I. Sumpono, 2011. Morphology and Chemical Composition of In_xGa_1-xAs NWs Au-assisted Grown at Low Growth Temperature Using MOCVD. Journal of Applied Sciences, 11: 1315-1320.

DOI: 10.3923/jas.2011.1315.1320

URL: http://scialert.net/abstract/?doi=jas.2011.1315.1320

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