Song Wang
School of Mechanical, Electrical and Information Engineering, Shandong University (Weihai) Weihai, Shandong, China
ABSTRACT
The Insulated Gate Bipolar Transistor (IGBT) is a composite device of MOSFET and bipolar transistors. It is widely used in the higher frequency, large and medium power equipments. Therefore, the protection circuit of driver board of IGBT is a very important part for IGBT application. In this paper, we propose an improved drive circuit based on the Fuji EXB841, which has the function of Vce protection, low voltage protection, soft-close mechanism and adjustable rise time Tr of break over and fall time Tf of shutdown. The improved circuit enhances the reliability of the drive board. The experiments exhibit the validity of the improved drive board.
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How to cite this article
Song Wang, 2013. A IGBT Drive Circuit with Adjustable Rise and Fall Time. Journal of Applied Sciences, 13: 2033-2038.
DOI: 10.3923/jas.2013.2033.2038
URL: https://scialert.net/abstract/?doi=jas.2013.2033.2038
DOI: 10.3923/jas.2013.2033.2038
URL: https://scialert.net/abstract/?doi=jas.2013.2033.2038
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